AT52BC6402AT datasheet pdf

1 Stack Module Features •64-Mbit Flash + 16-Mbit PSRAM •Power Supply of 2.7V to 3.1V •Data I/O x16 •66-ball CBGA Package: 8 x 11x 1.0 mm 64-Mbit Flash Features •64-megabit (4M x 16) Flash Memory •2.7V - 3.1V Read/Write •High Performance – Asynchronous Access Time – 70, 85 ns •Sector Erase Architecture – Eight 4K Word Sectors with Individual Write Lockout – 32K Word Main Sectors with Individual Write Lockout •Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms •64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not Being Programmed/Erased – Memory Plane A: 16M of Memory Including Eight 4K Word Sectors – Memory Plane B: 16M of Memory Consisting of 32K Word Sectors – Memory Plane C: 16M of Memory Consisting of 32K Word Sectors – Memory Plane D: 16M of Memory Consisting of 32K Word Sectors •Suspend/Resume Feature for Erase and Program – Supports Reading and Programming Data from Any Sector by Suspending Erase of a Different Sector – Supports Reading Any Word by Suspending Programming of Any Other Word •Low-power Operation –30 mA Active – 35 μA Standby •1.8V I/O Option Reduces Overall System Power •Data Polling and Toggle Bit for End of Program Detection •VPP Pin for Write Protection and Accelerated Program/Erase Operations •RESET Input for Device Initialization •Top or Bottom Boot Block Configuration Available •128-bit Protection Register •Common Flash Interface (CFI) 16-Mbit PSRAM Features •16-Mbit (1M x 16) •2.7V to 3.1V V CC Operation •70 ns Access Time Stack Module Description The AT52BC6402A(T) consists of a 64-Mbit Flash stacked with a 16-Mbit PSRAM in a single CBGA package. Stack Module Memory Contents DeviceMemory CombinationFlash/PSRAM Read Access AT52BC6402A(T)64M Flash + 16M PSRAMAsynchronous, Page Mode 64-Mbit Flash, 16-Mbit PSRAM (x16 I/O) AT52BC6402A AT52BC6402AT Preliminary Rev. 3441B–STKD–11/04

Features

• •64-Mbit Flash + 16-Mbit PSRAM
• •Power Supply of 2.7V to 3.1V
• •Data I/O x16
• •66-ball CBGA Package: 8 x 11x 1.0 mm
• •64-megabit (4M x 16) Flash Memory
• •2.7V - 3.1V Read/Write
• •High Performance
• •Sector Erase Architecture
• •Typical Sector Erase Time: 32K Word Sectors – 500 ms; 4K Word Sectors – 100 ms
• •64M, Four Plane Organization, Permitting Concurrent Read in Any of Three Planes not
• •Suspend/Resume Feature for Erase and Program
• •Low-power Operation
• •1.8V I/O Option Reduces Overall System Power
• •Data Polling and Toggle Bit for End of Program Detection
• •VPP Pin for Write Protection and Accelerated Program/Erase Operations
• •RESET Input for Device Initialization
• •Top or Bottom Boot Block Configuration Available
• •128-bit Protection Register
• •Common Flash Interface (CFI)
• •16-Mbit (1M x 16)
• •2.7V to 3.1V V
• •70 ns Access Time