AT49LV002T datasheet pdf

Flash Memory AT49BV002 AT49LV002 AT49BV002N AT49LV002N AT49BV002T AT49LV002T AT49BV002NT AT49LV002NT Rev. 0982D–FLASH–02/03 PLCC Top View Pin Configurations Pin NameFunction A0 - A17Addresses CE Chip Enable OE Output Enable WE Write Enable RESET RESET I/O0 - I/O7Data Inputs/Outputs DCDon’t Connect 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 A14 A13 A8 A9 A11 OE A10 CE I/O7 4321 323130 14151617181920 I/O1I/O2 GND I/O3I/O4I/O5I/O6 A12A15A16RESET*VCCWEA17 DIP Top View VSOP Top View (8 x 14 mm) or TSOP Top View (8 x 20 mm) Type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 *RESET A16 A15 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND VCC WE A17 A14 A13 A8 A9 A11 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 A17 WE VCC *RESET A16 A15 A12 A7 A6 A5 A4 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 Note:*This pin is a DC on the AT49BV002N(T) and AT49LV002N(T). Not Recommended for New Design Contact Atmel to discuss the latest design in trends and options

Features

• •Single Supply for Read and Write: 2.7 to 3.6V (BV), 3.0 to 3.6V (LV)
• •Fast Read Access Time – 70 ns
• •Internal Program Control and Timer
• •Sector Architecture
• •Fast Erase Cycle Time – 10 Seconds
• •Byte-by-Byte Programming – 30 μs/Byte Typical
• •Hardware Data Protection
• •DATA Polling for End of Program Detection
• •Low Power Dissipation
• •Typical 10,000 Write Cycles