AT49LV010 datasheet pdf

AT49(H)BV/(H)LV01 1 Features •Single Supply Voltage, Range 2.7V to 3.6V •Single Supply for Read and Write •Fast Read Access Time - 55 ns •Internal Program Control and Timer •8K bytes Boot Block With Lockout •Fast Erase Cycle Time - 10 seconds •Byte By Byte Programming - 30 μs/Byte typical •Hardware Data Protection •DATA Polling For End Of Program Detection •Low Power Dissipation – 25 mA Active Current –50 μA CMOS Standby Current •Typical 10,000 Write Cycles Description The AT49(H)BV010 and the AT49(H)LV010 are 3-volt-only, 1-megabit Flash memo- ries organized as 131,072 words of 8 bits each. Manufactured with Atmel’s advanced nonvolatile CMOS technology, the devices offer access times to 55 ns with power dis- sipation of just 90 mW over the commercial temperature range. When the devices are deselected, the CMOS standby current is less than 50 μ A. To allow for simple in-system reprogrammability, the AT49(H)BV/(H)LV010 does not require high input voltages for programming. Three-volt-only commands determine the read and programming operation of the device. Reading data out of the device is similar to reading from an EPROM. Reprogramming the AT49(H)BV/(H)LV010 is performed by erasing the entire 1 megabit of memory and then programming on a byte by byte basis. The typical byte programming time is a fast 30 μ s. The end of a program cycle can be optionally detected by the DATA polling feature. Once the end of a byte program cycle has been detected, a new access for a read or program can begin. The typical number of program and erase cycles is in excess of 10,000 cycles. 1-Megabit (128K x 8) Single 2.7-volt Battery-Voltage ™ Flash Memory AT49BV010 AT49HBV010 AT49LV010 AT49HLV010 0677B-A–9/97 Pin Configurations Pin NameFunction A0 - A16Addresses CE Chip Enable OE Output Enable WEWrite Enable I/O0 - I/O7Data Inputs/Outputs NCNo Connect PLCC Top View 5 6 7 8 9 10 11 12 13 29 28 27 26 25 24 23 22 21 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 A14 A13 A8 A9 A11 OE A10 CE I/O7 4321 323130 14151617181920 I/O1I/O2 GND I/O3I/O4I/O5I/O6 A12A15A16NCVCCWEA17 TSOP Top View Type 1 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A11 A9 A8 A13 A14 NC WE VCC NC A16 A15 A12 A7 A6 A5 A4 OE A10 CE I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3 (continued)

Features

• •Single Supply Voltage, Range 2.7V to 3.6V
• •Single Supply for Read and Write
• •Fast Read Access Time - 55 ns
• •Internal Program Control and Timer
• •8K bytes Boot Block With Lockout
• •Fast Erase Cycle Time - 10 seconds
• •Byte By Byte Programming - 30 μs/Byte typical
• •Hardware Data Protection
• •DATA Polling For End Of Program Detection
• •Low Power Dissipation
• •Typical 10,000 Write Cycles