AT49LV1614A datasheet pdf

1 Features •Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV) •AccessTime–70ns •Sector Erase Architecture – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout •Fast Word Program Time – 20 μs •Fast Sector Erase Time – 300 ms •Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors •Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector •Low-power Operation –30mAActive – 10 μA Standby •DataPolling, Toggle Bit, Ready/Busyfor End of Program Detection •VPP Pin for Accelerated Program/Erase Operations •RESETInput for Device Initialization •Sector Lockdown Support •TSOP and CBGA Package Options •Top or Bottom Boot Block Configuration Available •128-bit Protection Register Description The AT49BV/LV16X4A(T) is a 2.65- to 3.3-volt 16-megabit Flash memory organized as 1,048,576 words of 16 bits each or 2,097,152 bytes of 8 bits each. The x16 data appears on I/O0 - I/O15; the x8 data appears on I/O0 - I/O7. The memory is divided into 39 sectors for erase operations. The device is offered in 48-lead TSOP and 48-ball CBGA packages. The device has CE and OEcontrol signals to avoid any bus contention. This device can be read or reprogrammed using a single 2.65V power supply, making it ideally suited for in-system programming. Pin Configurations Pin NameFunction A0 - A19Addresses CE Chip Enable OE Output Enable WE Write Enable RESET Reset RDY/BUSY READY/BUSYOutput VPPPower Supply for Accelerated Program/Erase Operations I/O0 - I/O14Data Inputs/Outputs I/O15 (A-1)I/O15 (Data Input/Output, Word Mode) A-1 (LSB Address Input, Byte Mode) BYTE Selects Byte or Word Mode NCNo Connect VCCQOutput Power Supply 16-megabit (1Mx16/2Mx8) 3-volt Only Flash Memory AT49BV1604A AT49BV1604AT AT49BV1614A AT49LV1614A AT49BV1614AT AT49LV1614AT Rev. 1411F–FLASH–03/02

Features

• •Single Voltage Read/Write Operation: 2.65V to 3.3V (BV), 3.0V to 3.6V (LV)
• •AccessTime–70ns
• •Sector Erase Architecture
• •Fast Word Program Time – 20 μs
• •Fast Sector Erase Time – 300 ms
• •Dual-plane Organization, Permitting Concurrent Read while Program/Erase
• •Erase Suspend Capability
• •Low-power Operation
• •DataPolling, Toggle Bit, Ready/Busyfor End of Program Detection
• •VPP Pin for Accelerated Program/Erase Operations
• •RESETInput for Device Initialization
• •Sector Lockdown Support
• •TSOP and CBGA Package Options
• •Top or Bottom Boot Block Configuration Available
• •128-bit Protection Register