AT505S16 datasheet pdf

Manufacturer

Unknown

File Size

168.67 KB

Updated

Dec 15, 2025, 10:07 AM

💡

Ready to Purchase This Component?

Our procurement experts can help you find the best options and pricing.

🔄

Find compatible alternatives

Discover drop-in replacements and equivalent components

💰

Real-time inventory & pricing

Get current stock levels and competitive quotes

🛠️

Technical engineering support

Expert guidance on specifications and compatibility

📧

Email us directly

support@all-datasheet-pdf.com

Response time: Typically within 24 hours during business days

AT505S16 datasheet pdf PDF Viewer

Loading PDF...

AT505S16 datasheet pdf

Datasheet Information

Pages: 4

PHASE CONTROL THYRISTORAT505 Repetitive voltage up to1600V Mean on-state current430A Surge current5.6kA FINAL SPECIFICATION gen 03 - ISSUE : 05 SymbolCharacteristicConditions Tj [°C] ValueUnit BLOCKING VRRMRepetitive peak reverse voltage1251600V V RSMNon-repetitive peak reverse voltage1251700V V DRMRepetitive peak off-state voltage1251600V I RRMRepetitive peak reverse currentV=VRRM12530mA I DRMRepetitive peak off-state currentV=VDRM12530mA CONDUCTING IT (AV)Mean on-state current180° sin, 50 Hz, Th=55°C, double side cooled430A I T (AV)Mean on-state current180° sin, 50 Hz, Tc=85°C, double side cooled340A I TSMSurge on-state currentsine wave, 10 ms1255.6kA I² tI² twithout reverse voltage157 x1E3A²s V TOn-state voltageOn-state current = 800 A251.55V V T(TO)Threshold voltage1251.0V r TOn-state slope resistance1250.680mohm SWITCHING di/dtCritical rate of rise of on-state current, min.From 75% VDRM up to 450 A, gate 10V 5ohm 125200A/μs dv/dtCritical rate of rise of off-state voltage, min.Linear ramp up to 70% of VDRM125500V/μs tdGate controlled delay time, typicalVD=100V, gate source 10V, 10 ohm , tr=.5 μs251.6μs tqCircuit commutated turn-off time, typicaldV/dt = 20 V/μs linear up to 75% VDRM200μs Q rrReverse recovery chargedi/dt=-20 A/μs, I= 290 A125μC I rrPeak reverse recovery currentVR= 50 VA I HHolding current, typicalVD=5V, gate open circuit25300mA I LLatching current, typicalVD=5V, tp=30μs25700mA GATE VGTGate trigger voltageVD=5V253.5V I GTGate trigger currentVD=5V25200mA V GDNon-trigger gate voltage, min.VD=VDRM1250.25V V FGMPeak gate voltage (forward) 20V I FGMPeak gate current 8A V RGMPeak gate voltage (reverse) 5V P GMPeak gate power dissipationPulse width 100 μs 75W P GAverage gate power dissipation 1W MOUNTING Rth(j-h)Thermal impedance, DCJunction to heatsink, double side cooled95°C/kW R th(c-h)Thermal impedanceCase to heatsink, double side cooled20°C/kW T jOperating junction temperature -30 / 125°C FMounting force 4.9 / 5.9kN Mass55g ORDERING INFORMATION : AT505 S 16 standard specification VDRM&VRRM/100 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510

Specifications
PHASE CONTROL THYRISTORAT505 Repetitive voltage up to1600V Mean on-state current430A Surge current5.6kA FINAL SPECIFICATION gen 03 - ISSUE : 05 SymbolCharacteristicConditions Tj [°C] ValueUnit BLOCKING VRRMRepetitive peak reverse voltage1251600V V RSMNon-repetitive peak reverse voltage1251700V V DRMRepetitive peak off-state voltage1251600V I RRMRepetitive peak reverse currentV=VRRM12530mA I DRMRepetitive peak off-state currentV=VDRM12530mA CONDUCTING IT (AV)Mean on-state current180° sin, 50 Hz, Th=55°C, double side cooled430A I T (AV)Mean on-state current180° sin, 50 Hz, Tc=85°C, double side cooled340A I TSMSurge on-state currentsine wave, 10 ms1255.6kA I² tI² twithout reverse voltage157 x1E3A²s V TOn-state voltageOn-state current = 800 A251.55V V T(TO)Threshold voltage1251.0V r TOn-state slope resistance1250.680mohm SWITCHING di/dtCritical rate of rise of on-state current, min.From 75% VDRM up to 450 A, gate 10V 5ohm 125200A/μs dv/dtCritical rate of rise of off-state voltage, min.Linear ramp up to 70% of VDRM125500V/μs tdGate controlled delay time, typicalVD=100V, gate source 10V, 10 ohm , tr=.5 μs251.6μs tqCircuit commutated turn-off time, typicaldV/dt = 20 V/μs linear up to 75% VDRM200μs Q rrReverse recovery chargedi/dt=-20 A/μs, I= 290 A125μC I rrPeak reverse recovery currentVR= 50 VA I HHolding current, typicalVD=5V, gate open circuit25300mA I LLatching current, typicalVD=5V, tp=30μs25700mA GATE VGTGate trigger voltageVD=5V253.5V I GTGate trigger currentVD=5V25200mA V GDNon-trigger gate voltage, min.VD=VDRM1250.25V V FGMPeak gate voltage (forward) 20V I FGMPeak gate current 8A V RGMPeak gate voltage (reverse) 5V P GMPeak gate power dissipationPulse width 100 μs 75W P GAverage gate power dissipation 1W MOUNTING Rth(j-h)Thermal impedance, DCJunction to heatsink, double side cooled95°C/kW R th(c-h)Thermal impedanceCase to heatsink, double side cooled20°C/kW T jOperating junction temperature -30 / 125°C FMounting force 4.9 / 5.9kN Mass55g ORDERING INFORMATION : AT505 S 16 standard specification VDRM&VRRM/100 POSEICO SPA POwer SEmiconductors Italian COrporation POSEICO POSEICO SPA Via N. Lorenzi 8, 16152 Genova - ITALY Tel. ++ 39 010 6556234 - Fax ++ 39 010 6557519 Sales Office: Tel. ++ 39 010 6556775 - Fax ++ 39 010 6442510

Need alternate parts or stock quotes?

We can help you confirm compatible replacements, availability, and pricing. Use the options below to reach our team.

AT505S16 datasheet pdf Datasheet PDF - Unknown | All Datasheet PDF