STH160N4LF6-2-STMicroelectronics datasheet pdf

This is information on a product in full production. April 2014DocID026265 Rev 11/17 STH160N4LF6-2 N-channel 40 V, 0.0018 mΩ typ., 120 A, STripFET™ VI DeepGATE™ Power MOSFET in a H²PAK-2 package Datasheet - production data Figure 1. Internal schematic diagram Features •R DS(on) * Q g industry benchmark •Extremely low on-resistance R DS(on) •Logic level drive •High avalanche ruggedness •100% avalanche tested Applications •Switching applications Description This device is an N-channel Power MOSFET developed using the 6 th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest R DS(on) in all packages. $0Y 'Ć7$% *Ć 6ĆĆ 1 2 3 TAB H 2 PAK-2 Order codeV DS R DS(on) maxI D P TOT STH160N4LF6-2 40 V0.0022 Ω120 A 150 W Table 1. Device summary Order codeMarkingPackagePackaging STH160N4LF6-2160N4LF6 H 2 PAK-2 Tape and reel www.st.com

Features

• •R
• * Q
• •Extremely low on-resistance R
• •Logic level drive
• •High avalanche ruggedness
• •100% avalanche tested
• •Switching applications
• *Ć