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Pages: 18
February 2011Doc ID 16919 Rev 21/18 18 STB120N4LF6 STD120N4LF6 N-channel 40 V, 3.1 mĪ©, 80 A DPAK, DĀ²PAK STripFETā¢ VI DeepGATEā¢ Power MOSFET Features ā Logic level drive ā 100% avalanche tested Application ā Switching applications ā Automotive Description This product is a 40 V N-channel STripFETā¢ VI Power MOSFET based on the STās proprietary STripFETā¢ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.
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