BC640 (2) datasheet pdf

www.DataSheet4U.com  Semiconductor Components Industries, LLC, 2001 June, 2000 – Rev. 1 1Publication Order Number: BC636/D BC636, BC636-16, BC638, BC640, BC640-16 High Current Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector-Emitter Voltage BC636 BC638 BC640 V CEO –45 –60 –80 Vdc Collector-Base Voltage BC636 BC638 BC640 V CBO –45 –60 –80 Vdc Emitter-Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –0.5Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watts mW/°C Operating and Storage Junction Temperature Range T J , T stg –55 to +150 °C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R θJA 200°C/W Thermal Resistance, Junction to Case R θJC 83.3°C/W DevicePackageShipping ORDERING INFORMATION BC636TO–92 http://onsemi.com CASE 29 TO–92 STYLE 14 5000 Units/Box 3 2 1 BC636ZL1TO–922000/Ammo Pack COLLECTOR 2 3 BASE 1 EMITTER BC636–16ZL1TO–922000/Ammo Pack BC638TO–925000 Units/Box BC638ZL1TO–922000/Ammo Pack BC640TO–925000 Units/Box BC640ZL1TO–922000/Ammo Pack BC640–16TO–925000 Units/Box

Specifications