BC639 (2) datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data High Current Transistors NPN Silicon MAXIMUM RATINGS RatingSymbol BC 635 BC 637 BC 639 Unit Collector – Emitter VoltageV CEO 456080Vdc Collector – Base VoltageV CBO 456080Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 0.5Adc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (1) (I C = 10 mAdc, I B = 0)BC635 BC637 BC639 V (BR)CEO 45 60 80 — — — — — — Vdc Collector – Base Breakdown Voltage (I C = 100 μAdc, I E = 0)BC635 BC637 BC639 V (BR)CBO 45 60 80 — — — — — — Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 5.0——Vdc Collector Cutoff Current (V CB = 30 Vdc, I E = 0) (V CB = 30 Vdc, I E = 0, T A = 125°C) I CBO — — — — 100 10 nAdc μAdc 1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle 2.0%. Order this document by BC635/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC635 BC637 BC639 CASE 29–04, STYLE 14 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 2 3 BASE 1 EMITTER

Specifications