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BC636 — PNP Epitaxial Silicon Transistor © 2004 Fairchild Semiconductor Corporation www.fairchildsemi.com BC636 Rev. 1.3 October 2015 BC636 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Complement to BC635 Ordering Information Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Part NumberTop MarkPackagePacking Method BC636TABC636TO-92 3LAmmo SymbolParameterValueUnit V CER Collector-Emitter Voltage at R BE = 1 KΩ-45V V CES Collector-Emitter Voltage -45V V CEO Collector-Emitter Voltage -45V V EBO Emitter-Base Voltage-5V I C Collector Current-1A I CP Peak Collector Current-1.5A I B Base Current-100mA T J Junction Temperature150°C T STG Storage Temperature-65 to 150°C 1. Emitter 1 2 3 1 2 3 Straight Lead Bent Lead TO-92 Bulk Packing Tape & Reel Ammo Packing 2. Collector 3. Base
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