SB520 datasheet pdf

SB520 – SB5100 1 of 4 © 2006 Won-Top Electronics Pb SB520 – SB5100 5.0A SCHOTTKY BARRIER DIODE Features ! Schottky Barrier Chip ! Guard Ring Die Construction for Transient Protection ! High Current Capability A B A ! Low Power Loss, High Efficiency ! High Surge Current Capability ! For Use in Low Voltage, High Frequency Inverters, Free Wheeling, and Polarity Protection Applications C
















































































D Mechanical Data ! Case: DO-201AD, Molded Plastic ! Terminals: Plated Leads Solderable per MIL-STD-202, Method 208 ! Polarity: Cathode Band ! Weight: 1.2 grams (approx.) ! Mounting Position: Any ! Marking: Type Number !

Features

• 5.0A SCHOTTKY BARRIER DIODE

Specifications

@T A =25°C unless otherwise specified Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. CharacteristicSymbolSB520 SB530 SB540 SB550 SB560 SB580 SB5100Unit Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage V RRM V RW M V R 203040506080100V RMS Reverse VoltageV R(RMS) 14212835425670V Average Rectified Output Current @T L = 100°C (Note 1) I O 5.0A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) I FSM 150A Forward Voltage @I F = 5.0AV FM 0.550.700.85V Peak Reverse Current @T A = 25°C At Rated DC Blocking Voltage @T A = 100°C I RM 0.5 50 mA Typical Junction Capacitance (Note 2)C j 500400pF Typical Thermal Resistance (Note 1)R
JA 10°C/W Operating and Storage Temperature RangeT j , T STG -65 to +150°C Note: 1. Valid provided that leads are kept at ambient temperature at a distance of 9.5mm from the case. 2. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. WTE POWER SEMICONDUCTORS DO-201AD DimMinMax A 25.4— B 7.209.50 C 1.201.30 D 4.805.30 All Dimensions in mm