IXXN110N65C4H1-1 datasheet pdf

© 2015 IXYS CORPORATION, All Rights Reserved IXXN110N65C4H1 V CES = 650V I C110 = 110A V CE(sat)      2.35V t fi(typ) = 30ns SymbolTest ConditionsMaximum Ratings V CES T J = 25°C to 175°C 650V V CGR T J = 25°C to 175°C, R GE = 1M 650V V GES Continuous ±20V V GEM Transient ±30V I C25 T C = 25°C (Chip Capability) 210 A I C25 Terminal Current Limit 200 A I C110 T C = 110°C 110A I F110 T C = 110°C 70A I CM T C = 25°C, 1ms 470A SSOAV GE = 15V, T VJ = 150°C, R G = 2 I CM = 220A (RBSOA) Clamped Inductive Load @V CE  V CES t sc V GE = 15V, V CE = 360V, T J = 150°C 10 μs (SCSOA)R G = 82, Non Repetitive P C T C = 25°C750W T J -55 ... +175°C T JM 175°C T stg -55 ... +175°C V ISOL 50/60Hzt = 1min 2500 V~ I ISOL 1mAt = 1s 3000 V~ M d Mounting Torque 1.5/13 Nm/lb.in Terminal Connection Torque 1.3/11.5 Nm/lb.in Weight 30 g DS100506C(01/15) Extreme Light Punch Through IGBT for 20-60kHz Switching SymbolTest Conditions Characteristic Values (T J = 25C, Unless Otherwise Specified) Min. Typ. Max. BV CES I C = 250A, V GE = 0V 650 V V GE(th) I C = 4mA, V CE = V GE 4.0 6.5V I CES V CE = V CES ,