April 1995
BS270
N-Channel Enhancement Mode Field Effect Transistor
General Description Features
________________________________________________________________________________
Specifications
Absolute Maximum Ratings T
A
= 25°C unless otherwise noted
SymbolParameterBS270Units
V
DSS
Drain-Source Voltage60V
V
DGR
Drain-Gate Voltage (R
GS
<
1MΩ)
60V
V
GSS
Gate-Source Voltage - Continuous
±20
V
- Non Repetitive (tp < 50μs)
±40
I
D
Drain Current - Continuous 400mA
- Pulsed2000
P
D
Maximum Power Dissipation625mW
Derate Above 25°C5mW/°C
T
J
,T
STG
Operating and Storage Temperature Range-55 to 150°C
T
L
Maximum Lead Temperature for Soldering
Purposes, 1/16" from Case for 10 Seconds
300°C
THERMAL CHARACTERISTICS
R
θ
JA
Thermal Resistacne, Junction-to-Ambient200°C/W
BS270.SAM
400mA, 60V. R
DS(ON)
= 2Ω @ V
GS
= 10V.
High density cell design for low R
DS(ON)
.
Voltage controlled small signal switch.
Rugged and reliable.
High saturation current capability.
These N-Channel enhancement mode field effect transistors
are produced using Fairchild's proprietary, high cell density,
DMOS technology. These products have been designed to
minimize on-state resistance while provide rugged, reliable,
and fast switching performance. They can be used in most
applications requiring up to 500mA DC. These products are
particularly suited for low voltage, low current applications such
as small servo motor control, power MOSFET gate drivers,
and other switching applications.
S
D
G
© 1997 Fairchild Semiconductor Corporation