BS170 (2) datasheet pdf

Semiconductor Group 112/05/1997 BS 170 SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level • V GS(th) = 0.8...2.0V Pin 1Pin 2Pin 3 SGD Type V DS I D R DS(on) PackageMarking BS 17060 V0.3 A5 Ω TO-92BS 170 TypeOrdering CodeTape and Reel Information BS 170Q67000-S076E6288 Maximum Ratings Parameter SymbolValuesUnit Drain source voltageV DS 60V Drain-gate voltage R GS = 20 k Ω V DGR 60 Gate source voltageV GS ± 14 Gate-source peak voltage,aperiodicV gs ± 20 Continuous drain current T A = 25 °C I D 0.3 A DC drain current, pulsed T A = 25 °C I Dpuls 1.2 Power dissipation T A = 25 °C P tot 0.63 W

Specifications