BPW96 datasheet pdf

BPW96 Vishay Telefunken 1 (6) Rev. 3, 16-Nov-99 www.vishay.de •FaxBack +1-408-970-5600 Document Number 81532 Silicon NPN Phototransistor Description BPW96 is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard T–1¾ (ø 5 mm) package. Due to its waterclear epoxy the de- vice is sensitive to visible and near infrared radiation. The viewing angle of ± 20° makes it insensible to ambi- ent straylight. Features DFast response times DHigh photo sensitivity DStandard T–1¾ (ø 5 mm) clear plastic package DAngle of half sensitivity φ = ± 20° DSuitable for visible and near infrared radiation DSelected into sensitivity groups 94 8391 Applications Detector in electronic control and drive circuits Absolute Maximum Ratings T amb = 25_C ParameterTest ConditionsSymbolValueUnit Collector Emitter VoltageV CEO 70V Emitter Collector VoltageV ECO 5V Collector CurrentI C 50mA Peak Collector Current t p /T = 0.5, t p x 10 ms I CM 100mA Total Power Dissipation T amb x 47 °C P tot 150mW Junction TemperatureT j 100°C Storage Temperature RangeT stg –55...+100°C Soldering Temperature t x 3 s T sd 260°C Thermal Resistance Junction/AmbientR thJA 350K/W

Specifications