BPV10 datasheet pdf

BPV10 www.vishay.com Vishay Semiconductors

Rev. 1.9, 22-Nov-11 1 Document Number: 81502 For technical questions, contact: detectortechsupport@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Silicon PIN Photodiode DESCRIPTION BPV10 is a PIN photodiode with high speed and high radiant sensitivity in clear, T-1¾ plastic package. It is sensitive to visible and near infrared radiation. FEATURES • Package type: leaded • Package form: T-1¾ • Dimensions (in mm): Ø 5 • Leads with stand-off • Radiant sensitive area (in mm 2 ): 0.78 • High photo sensitivity • High radiant sensitivity • Suitable for visible and near infrared radiation • High bandwidth: 250 MHz at V R = 12 V • Fast response times • Angle of half sensitivity: φ = ± 20° • Compliant to RoHS Directive 2002/95/EC and in accordance with WEEE 2002/96/EC Note **Please see document “Vishay Material Category Policy”: www.vishay.com/doc?99902 APPLICATIONS • High speed photo detector Note • Test condition see table “Basic Characteristics” Note • MOQ: minimum order quantity 94 8390 PRODUCT SUMMARY COMPONENTI ra (μA)φ (deg)λ 0.1 (nm) BPV1070± 20380 to 1100 ORDERING INFORMATION ORDERING CODEPACKAGINGREMARKSPACKAGE FORM BPV10BulkMOQ: 4000 pcs, 4000 pcs/bulkT-1¾ ABSOLUTE MAXIMUM RATINGS (T amb = 25 °C, unless otherwise specified) PARAMETERTEST CONDITIONSYMBOLVALUEUNIT Reverse voltageV R 60V Power dissipationT amb ≤ 25 °CP V 215mW Junction temperatureT j 100°C Operating temperature rangeT amb - 40 to + 100°C Storage temperature rangeT stg - 40 to + 100°C Soldering temperaturet ≤ 5 s, 2 mm from bodyT sd 260°C Thermal resistance junction/ambientConnected with Cu wire, 0.14 mm 2 R thJA 350K/W

Features

• • Package type: leaded
• • Package form: T-1¾
• • Dimensions (in mm): Ø 5
• • Leads with stand-off
• • Radiant sensitive area (in mm
• • High photo sensitivity
• • High radiant sensitivity
• • Suitable for visible and near infrared radiation
• • High bandwidth: 250 MHz at V
• • Fast response times
• • Angle of half sensitivity: φ = ± 20°
• • Compliant to RoHS Directive 2002/95/EC and in
• **Please see document “Vishay Material Category Policy”:
• • High speed photo detector
• • Test condition see table “Basic Characteristics”
• • MOQ: minimum order quantity
• 0.1
• - 40 to + 100°C
• - 40 to + 100°C