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2011-09-15 1 BGA427 in SIEGET 25-Technologie Si-MMIC-Amplifier 1 2 3 4 • Cascadable 50 Ω-gain block • Unconditionally stable • Gain |S 21 | 2 = 18.5 dB at 1.8 GHz (Appl.1) gain |S 21 | 2 = 22 dB at 1.8 GHz (Appl.2) IP 3out = +7 dBm at 1.8 GHz (V D =3V, I D =9.4mA) • Noise figure NF = 2.2 dB at 1.8 GHz • Typical device voltage V D = 2 V to 5 V • Reverse isolation > 35 dB (Appl.2) • Pb-free (RoHS compliant) package EHA07378 V 2 1 IN OUT + 4 3 GND Circuit Diagram ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BGA427BMs1, IN2, GND3, +V4, Out SOT343 Maximum Ratings Parameter SymbolValueUnit Device currentI D 25mA Device voltageV D ,+V6V Total power dissipation T S = 120 °C P tot 150mW RF input powerP RFin -10 dBm Junction temperatureT j 150°C Ambient temperature rangeT A -65 ... 150 Storage temperature rangeT stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 295 K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
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