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DESCRIPTION The BFY90 is a low noise transistor intended for use in broad and narrow-band amplifiers up to 1GHz. ABSOLUTE MAXIMUM RATINGS(T A = 25°C unless otherwise stated) BFY90 Prelim. 12/99 Semelab plc.Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk SILICON PLANAR EPITAXIAL NPN TRANSISTOR V CBO Collector – Base Voltage V CER Collector – Emitter Voltage (R BE £50W) V CEO Collector – Emitter Voltage V EBO Emitter – Base Voltage I C(AV) Average Collector Current I CM Peak Collector Current (f³1MHz) P tot Power Dissipation at T amb =25°C T j Storage Temperature T stg, Junction Temperature 30V 30V 15V 2.5v 25mA 50mA 200mW°C 200°C –65 to +200°C MECHANICAL DATA Dimensions in mm (inches) 0.48 (0.019) 0.41 (0.016) dia. 4.95 (0.195) 4.52 (0.178) 4.95 (0.195) 4.52 (0.178) 5.33 (0.210)4.32 (0.170) 12.7 (0.500) min. 1 2 3 4 2.54 (0.100) Nom. TO72 Pin 1 – Emitter Pin 2 –Base Pin 3 – Collector Pin 4 – Connected to Case
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