BFT92 datasheet pdf

[1]T s is the temperature at the soldering point of the collector tab. BFT92 PNP 5 GHz wideband transistor Rev. 3 — 22 January 2016Product data sheet Table 1.Quick reference data SymbolParameterConditionsMinTypMaxUnit V CBO collector-base voltageopen emitter--20 V V CEO collector-emitter voltageopen base--15 V I C DC collector current--25 mA P tot total power dissipationup to T s = 95 C [1] --300mW f T transition frequencyI C = 14 mA; V CE = 10 V; f = 500 MHz-5-GHz C re feedback capacitanceI C = 2mA; V CE = 10 V; f = 1 MHz-0.7-pF G UM maximum unilateral power gain I C = 14 mA; V CE = 10 V; f = 500 MHz T amb = 25 C; -18-dB NFnoise figureI C = 5mA; V CE = 10 V; f = 500 MHz; T amb = 25 C -2.5-dB d im intermodulation distortionI C = 14 mA; V CE = 10 V; R L =75 ; V o =150 mV; T amb =25 C; f (p + q-r) = 493.25 MHz -60-dB