BFT25A datasheet pdf

[1]T s is the temperature at the soldering point of the collector tab. BFT25A NPN 5 GHz wideband transistor Rev. 5 — 12 September 2011Product data sheet SOT23 Table 1.Quick reference data SymbolParameterConditionsMinTypMaxUnit V CBO collector-base voltage open emitter--8V V CEO collector-emitter voltage open base--5V I C DC collector current --6.5mA P tot total power dissipation up to T s = 165 C [1] --32mW h FE DC current gainI C = 0.5 mA; V CE = 1 V5080200 f T transition frequency I C = 1 mA; V CE = 1 V; T amb =25C; f = 500 MHz 3.55-GHz G UM maximum unilateral power gain I C = 0.5 mA; V CE = 1 V; T amb = 25 C; f=1 GHz -15-dB Fnoise figure= opt ; I C = 0.5 mA; V CE = 1 V; T amb =25 C; f = 1 GHz -1.8-dB = opt ; I C = 1 mA; V CE = 1 V; T amb =25 C; f = 1 GHz -2-dB