BFR93P datasheet pdf

NPN Silicon RF Transistor BFR 93P ESD:Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings TypeMarking Package 1) Pin Configuration BFR 93PQ62702-F1051GGSOT-23 123 BEC Ordering Code (tape and reel) ParameterSymbolValuesUnit Collector-emitter voltageV CE015V Emitter-base voltageVEB02.5 Collector currentI C50mA Collector-base voltageV CB020 Base currentIB10 Junction temperatureTj150 ̊C Ambient temperature rangeT A– 65 ... + 150 Total power dissipation,T S≤65 ̊C 3) Ptot280mW Storage temperature rangeT stg– 65 ... + 150 Thermal Resistance Junction - ambient 2) Rth JA≤ 385K/W Junction - soldering point 3) Rth JS≤ 305 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. lFor low-distortion broadband amplifiers up to 1 GHz at collector currents from 2 mA to 30 mA. lCECC-type available: CECC 50002/256.

Specifications