BFR93ALT1 datasheet pdf

1 BFR93ALT1MOTOROLA RF DEVICE DATA The RF Line NPN Silicon High-Frequency Transistors Designed primarily for use in high–gain, low–noise, small–signal UHF and microwave amplifiers constructed with thick and thin–film circuits using surface mount components. •T1 Suffix Indicates Tape and Reel Packaging of 3,000 Units per Reel. MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO 12Vdc Collector–Base VoltageV CBO 15Vdc Emitter–Base VoltageV EBO 2.0Vdc Collector Current — ContinuousI C 35mAdc Maximum Junction TemperatureT Jmax 150°C Power Dissipation, T case = 75°C (2) Derate linearly above T case = 75°C @ P D(max) 0.306 4.08 W mW/°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Storage TemperatureT stg – 55 to +150°C Thermal Resistance Junction to CaseR θJC 245°C/W DEVICE MARKING BFR93ALT1 = R2 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (1) (I C = 10 mA) V (BR)CEO 12—Vdc Collector–Base Breakdown Voltage (I C = 10 μA) V (BR)CBO 15—Vdc Emitter–Base Breakdown Voltage (I C = 100 μA) V (BR)EBO 2.0—Vdc Collector Cutoff Current (V CE = 10 V)I CEO —50nA Collector Cutoff Current (V CB = 10 V)I CBO —50nA ON CHARACTERISTICS DC Current Gain (1) (I C = 30 mA, V CE = 5.0 V) h FE 40—— Collector–Emitter Saturation Voltage (1) (I C = 35 mA, I B = 7.0 mA) V CE(sat) —0.5Vdc Base–Emitter Saturation Voltage (1) (I C = 35 mA, I B = 7.0 mA) V BE(sat) —1.2Vdc NOTES: 1. Pulse Width ≤ 300 μs, Duty Cycle ≤ 2.0%. 2.Case temperature measured on collector lead immediately adjacent to body of package. Order this document by BFR93ALT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BFR93ALT1 RF TRANSISTORS NPN SILICON CASE 318–08, STYLE 6 SOT–23 LOW PROFILE  Motorola, Inc. 1995 REV 7

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