BFR92A datasheet pdf

NXP SemiconductorsProduct specification NPN 5GHz wideband transistorBFR92A FEATURES •High power gain •Low noise figure •Low intermodulation distortion. APPLICATIONS •RF wideband amplifiers and oscillators. DESCRIPTION NPN wideband transistor in a plastic SOT23 package. PNP complement: BFT92. PINNING PINDESCRIPTION 1base 2emitter 3collector Fig.1 SOT23. page MSB003Top view 12 3 Marking code: P2%. QUICK REFERENCE DATA LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). Note 1. T s is the temperature at the soldering point of the collector pin. SYMBOLPARAMETERCONDITIONSTYP.MAX.UNIT V CBO collector-base voltage−20V V CEO collector-emitter voltage−15V I C collector current (DC)−25mA P tot total power dissipationT s ≤95°C−300mW C re feedback capacitanceI C =i c = 0; V CE = 10 V; f = 1 MHz0.35−pF f T transition frequencyI C = 15 mA; V CE = 10 V; f = 500 MHz5−GHz G UM maximum unilateral power gainI C = 15 mA; V CE = 10 V; f = 1 GHz; T amb =25°C 14−dB I C = 15 mA; V CE = 10 V; f = 2 GHz; T amb =25°C 8−dB Fnoise figureI C = 5 mA; V CE = 10 V; f = 1 GHz; Γ s =Γ opt ; T amb =25°C 2.1−dB V O output voltaged im =−60 dB; I C = 14 mA; V CE =10V; R L =75Ω;f p +f q −f r = 793.25 MHz 150−mV SYMBOLPARAMETERCONDITIONSMIN.MAX.UNIT V CBO collector-base voltageopen emitter−20V V CEO collector-emitter voltageopen base−15V V EBO emitter-base voltageopen collector−2V I C collector current (DC)−25mA P tot total power dissipationT s ≤95°C; note 1; see Fig.3−300mW T stg storage temperature−65+150°C T j junction temperature−175°C Rev. 04 - 2 March 20092 of 12

Features

• •High power gain
• •Low noise figure
• •Low intermodulation distortion.
• •RF wideband amplifiers and
• 1. T
• 2.1−dB