BFR340T datasheet pdf

Jul-01-2003 1 BFR340T VPS05996 1 2 3 NPN Silicon RF Transistor Preliminary data
Low voltage/ low current operation
Transition frequency of 14 GHz
High insertion gain
Ideal for low current amplifiers and oscillators ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFR340TFAs 1 = B2 = E3 = C SC75 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltageV CEO 6V Collector-emitter voltageV CES 15 Collector-base voltageV CBO 15 Emitter-base voltageV EBO 2 Collector currentI C 10mA Base currentI B 2 Total power dissipation 1)

Specifications

T S
113°C P tot 60mW Junction temperatureT j 150°C Ambient temperatureT A -65 ... 150 Storage temperatureT stg -65 ... 150 Thermal Resistance ParameterSymbolValueUnit Junction - soldering point 2) R thJS
605 K/W 1 T S is measured on the collector lead at the soldering point to the pcb 2 For calculation of R thJA please refer to Application Note Thermal Resistance