BFQ75 datasheet pdf

PNP Silicon RF Transistor BFQ 75 ESD:Electrostaticdischarge sensitive device, observe handling precautions! Maximum Ratings TypeMarking Package 1) Pin Configuration BFQ 75Q62702-F80375Cerec-X 1234 BECE Ordering Code (tape and reel) Thermal Resistance Junction - ambient 2) Rth JA≤ 260K/W Junction - soldering point 3) Rth JS≤ 180 ParameterSymbolValuesUnit Collector-emitter voltageV CE012V Emitter-base voltageVEB02 Collector currentI C50mA Collector-base voltageV CB015 Junction temperatureTj175 ̊C Ambient temperature rangeT A– 65 ... + 175 Total power dissipation,T S≤112 ̊C 3) Ptot350mW Storage temperature rangeT stg– 65 ... + 175 Collector-emitter voltage,VBE= 0VCES1 1) For detailed dimensions see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 3) TS is measured on the collector lead at the soldering point to the pcb. lFor broadband amplifiers up to 2 GHz at collector currents from 5 mA to 30 mA. lComplementary type: BFQ 72 (NPN).

Specifications