BFQ19S datasheet pdf

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28.78 KB

Updated

Oct 22, 2025, 03:25 PM

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BFQ19S datasheet pdf

Datasheet Information

Pages: 4

≤ 85 °C P tot 1 W Junction temperatureT j 150°C Ambient temperatureT A - 65 ... + 150 Storage temperatureT stg - 65 ... + 150 Thermal Resistance Junction - soldering point 1) R thJS ≤ 65K/W

Specifications
Semiconductor Group1Dec-16-1996 BFQ 19S NPN Silicon RF Transistor • For low noise, low distortion broadband amplifiers in antenna and telecommunications systems up to 1.5GHz at collector currents from 10 mA to 70 mA • CECC-type available: CECC 50 002/259 ESD: Electrostatic discharge sensitive device, observe handling precaution! Type MarkingOrdering CodePin ConfigurationPackage BFQ 19SFGsQ62702-F10881 = B2 = C3 = E SOT-89 Maximum Ratings ParameterSymbolValuesUnit Collector-emitter voltageV CEO 15V Collector-base voltageV CBO 20 Emitter-base voltageV EBO 3 Collector currentI C 75mA Base currentI B 12 Total power dissipation T S
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