BFP520F datasheet pdf

2013-09-191 BFP520F 1 2 4 3 Low Noise Silicon Bipolar RF Transistor • For highest gain and low noise amplifier Outstanding G ms = 22.5 dB at 1.8 GHz Minimum noise figure NF min = 0.95 dB at 1.8 GHz • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Pb-free (RoHS compliant) and halogen-free thin small flat package with visible leads • Qualification report according to AEC-Q101 available ESD (Electrostatic discharge) sensitive device, observe handling precaution! TypeMarkingPin ConfigurationPackage BFP520FAPs 1=B2=E3=C4=E--TSFP-4 Maximum Ratings at T A = 25 °C, unless otherwise specified ParameterSymbolValueUnit Collector-emitter voltage T A = 25 °C T A = -55 °C V CEO