BFP520 datasheet pdf

BFP 520 Semiconductor Group Sep-09-19981 SIEGET  45 NPN Silicon RF Transistor Preliminary data • For highest gain low noise amplifier at 1.8 GHz and 2 mA / 2 V Outstanding G a = 20 dB Noise Figure F = 0.95 dB • For oscillators up to 15 GHz • Transition frequency f T = 45 GHz • Gold metalization for high reliability • SIEGET  45 - Line Siemens Grounded Emitter Transistor 45 GHz f T - Line VPS05605 4 2 1 3 ESD: Electrostatic discharge sensitive device, observe handling precaution! TypeMarkingOrdering CodePin ConfigurationPackage BFP 520APsQ62702-F17941 = B2 = E3 = C4 = ESOT-343 Maximum Ratings ParameterSymbolValueUnit Collector-emitter voltage V CEO 2.5V Collector-base voltage V CBO 12V Emitter-base voltage V EBO 1V Collector current I C 40mA Base current I B 4mA Total power dissipation, T S ≤ 105 °CP tot 100mW Junction temperature T j 150°C Ambient temperature T A -65 ...+150°C Storage temperature T stg -65 ...+150°C Thermal Resistance Junction - soldering point 1) R thJS ≤ 450 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group11998-11-01

Specifications