BFC51 datasheet pdf

1.65 (0.065) 2.13 (0.084) 5.25 (0.215) BSC

0.40 (0.016) 0.79 (0.031) 2.21 (0.087) 2.59 (0.102) 1.01 (0.040) 1.40 (0.055) 15.49 (0.610) 16.26 (0.640) 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 20.80 (0.819)21.46 (0.845) 6.15 (0.242) BSC 19.81 (0.780)20.32 (0.800) 4.50 (0.177) Max.

2.87 (0.113) 3.12 (0.123) TO247–AD Package Outline. Dimensions in mm (inches) Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Total Power Dissipation @ T case = 25°C Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. V GS = 0V , I D = 250μA V DS = V DSS V DS = 0.8V DSS , T C = 125°C V GS = ±30V , V DS = 0V V DS = V GS , I D = 1.0mA V DS > I D(ON) x R DS(ON) Max V GS = 10V V GS = 10V , I D = 0.5 I D [Cont.] N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 500 16 64 ±30 240 –55 to 150 300 V A A V W °C Drain – Source Breakdown Voltage Zero Gate Voltage Drain Current (V GS = 0V) Gate – Source Leakage Current Gate Threshold Voltage On State Drain Current 2 Drain – Source On State Resistance 2 500 250 1000 ±100 24 16 0.40 V μA nA V A Ω ABSOLUTE MAXIMUM RATINGS (T case = 25°C unless otherwise stated) 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Pulse Test: Pulse Width < 380μS , Duty Cycle < 2% STATIC ELECTRICAL RATINGS (T case = 25°C unless otherwise stated) BFC51 LAB SEME V DSS 500V I D(cont) 16.0A R DS(on) 0.40 ΩΩ 4TH GENERATION MOSFET Terminal 1GateTerminal 2Drain Terminal 3Source

Specifications