BF998W (1) datasheet pdf

Feb-13-2004 1 BF998... Silicon N_Channel MOSFET Tetrode • Short-channel transistor with high S / C quality factor • For low-noise, gain-controlled input stage up to 1 GHz ESD: Electrostatic discharge sensitive device, observe handling precaution! TypePackagePin ConfigurationMarking BF998 BF998R BF998W SOT143 SOT143R SOT343 1=S 1=D 1=D 2=D 2=S 2=S 3=G2 3=G1 3=G1 4=G1 4=G2 4=G2 - - - - - - MOs MRs MR Maximum Ratings Parameter SymbolValueUnit Drain-source voltageV DS 12V Continuous drain currentI D 30mA Gate 1/ gate 2-source current±I G1/2SM 10 Total power dissipation T S ≤ 76 °C, BF998, BF998R T S ≤ 94 °C, BF998W P tot