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BF979 Vishay Telefunken www.vishay.de ā¢ FaxBack +1-408-970-5600 Rev. 3, 20-Jan-99 1 (5) Document Number 85006 Silicon PNP Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. Applications UHF/VHF uncontrolled prestages with low noise and low modulation. Features DHigh cross modulation performance DHigh power gain DLow noise DHigh reverse attenuation 94 9308 1 3 2 BF979 Marking: BF979 Plastic case (TO 50) 1 = Collector, 2 = Base, 3 = Emitter 13623 Absolute Maximum Ratings T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Collector-base voltageāV CBO 20V Collector-emitter voltageāV CEO 20V Emitter-base voltageāV EBO 3V Collector currentāI C 50mA Total power dissipationT amb ā¤ 60 Ā°CP tot 300mW Junction temperatureT j 150Ā°C Storage temperature rangeT stg ā55 to +150Ā°C Maximum Thermal Resistance T amb = 25_C, unless otherwise specified ParameterTest ConditionsSymbolValueUnit Junction ambienton glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35mm Cu R thJA 300K/W
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