BF721 datasheet pdf

SOT223 PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR ISSUE 4 – MARCH 2001✪ FEATURES *High breakdown and low saturation voltages APPLICATIONS *Suitable for video output stages in TV sets *Switching power supplies COMPLEMENTARY TYPE:-BF720 PARTMARKING DETAILS:-BF721 ABSOLUTE MAXIMUM RATINGS. PARAMETERSYMBOLVALUEUNIT Collector-Base VoltageV CBO -300V Collector-Emitter VoltageV CEO -300V Emitter-Base VoltageV EBO -5V Peak Pulse CurrentI CM -100mA Continuous Collector CurrentI C -50mA Power Dissipation at T amb =25°CP tot -2W Operating and Storage Temperature Range T j :T stg -55 to +150°C ELECTRICAL CHARACTERISTICS (at T amb = 25°C unless otherwise stated). PARAMETERSYMBOLMIN.TYP.MAX.UNITCONDITIONS. Collector-Base Breakdown Voltage BF721V (BR)CBO -300V I C =-10μA, I E =0 Collector-Emitter Breakdown Voltage BF721V (BR)CEO -300VI C =-1mA, I B =0* Emitter-Base Breakdown Voltage V (BR)EBO -5V I E =-100μA, I C =0 Collector Cut-Off Current I CBO -10nAV CB =-200V, I E =0 † Collector Cut-Off Current I CER -50 -10 nA μA V CE =-200V, R BE =2.7KΩ V CE =-200V, R BE =2.7KΩ † Emitter Cut-Off Current I EBO -10 μA V EB =-5V, I C =0 Collector-Emitter Saturation Voltage V CE(sat) -0.6VI C =-30mA, I B =-5mA* Base Emitter Saturation Voltage V BE(sat) -0.9VI C =-20mA, I B =-2mA* Static Forward Current Transfer Ratio h FE -50I C =-25mA, V CE =-20V* Transition Frequencyf T 100MHzI C =-10mA, V CE =-10V f=100MHz Output CapacitanceC obo 0.8pFV CB =-30V, f=1MHz †T amb =150°C *Measured under pulsed conditions. For typical characteristics graphs see FMMTA92 datasheet. BF721 C C E B TBA

Features

• *High breakdown and low saturation voltages
• *Suitable for video output stages in TV sets
• *Switching power supplies
• -300V
• -300V
• -5V
• -100mA
• -50mA
• -2W
• -55 to +150°C
• -300V
• -300VI
• -5V
• -10nAV
• -50
• -10
• -10
• -0.6VI
• -0.9VI
• -50I
• 0.8pFV
• *Measured under pulsed conditions.