BF543 datasheet pdf

Semiconductor Group1 Silicon N Channel MOS FET Triode BF 543 Preliminary Data lFor RF stages up to 300 MHz preferably in FM applications lIDSS= 4 mA,gfs = 12 mS ESD: Electrostatic discharge sensitive device, observe handling precautions! Maximum Ratings TypeOrdering Code (tape and reel) Marking Package 1) Pin Configuration BF 543Q62702-F1372LDsSOT-23 123 GDS Thermal Resistance Junction - ambient 2) Rth JA≤ 450K/W ParameterSymbolValuesUnit Drain-source voltageV DS20V Drain currentID30mA Gate-source peak current ± IGSM10 Total power dissipation,TA≤ 60 ̊CPtot200mW Storage temperature rangeT stg– 55 ... + 150 ̊C Channel temperatureT ch150 Ambient temperature rangeT A– 55 ... + 150 1) For detailed information see chapter Package Outlines. 2) Package mounted on alumina 15 mm×16.7 mm×0.7 mm. 07.94

Specifications