BD180 (2) datasheet pdf

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Unknown

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40.64 KB

Updated

Dec 15, 2025, 10:06 AM

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BD180 (2) datasheet pdf

Datasheet Information

Pages: 4

: BD176 : BD178 : BD180 - 45 - 60 - 80 V V V

: BD176 : BD178 : BD180 - 45 - 60 - 80 V V V V CEO Collector-Emitter Voltage

V EBO Emitter-Base Voltage - 5V

I C Collector Current (DC) - 3A

: BD176 : BD178 : BD180 V CB = - 45V, I E = 0 V CB = - 60V, I E = 0 V CB = - 80V, I E = 0 - 100 - 100 - 100 μA μA μA I EBO Emitter Cut-off Current V EB = - 5V, I C = 0 - 1mA h FE1 h FE2 * DC Current Gain V CE = - 2V, I C = - 150mA V CE = - 2V, I C = - 1A 40 15 250 V CE (sat)* Collector-Emitter Saturation Voltage I C = -1 A , I B = - 0.1A- 0.8V V BE (on)* Base-Emitter On Voltage V CE = - 2V, I C = -1 A- 1.3V f T Current Gain Bandwidth Product V CE = -10V, I C = - 250mA 3MHz Classification61016 h FE1 40 ~ 10063 ~ 160100 ~ 250 BD176/178/180 Medium Power Linear and Switching Applications • Complement to BD 175/177/179 respectively 1 TO-126 1. Emitter 2.Collector 3.Base

Specifications
©2002 Fairchild Semiconductor CorporationRev. B1, October 2002 BD176/178/180 PNP Epitaxial Silicon Transistor Absolute Maximum Ratings T C =25°C unless otherwise noted Electrical Characteristics T C =25°C unless otherwise noted * Pulse Test: PW=300μs, duty Cycle=1.5% Pulsed h FE Classificntion * Classification 16: Only BD 176 SymbolParameterValueUnits V CBO *Collector-Base Voltage

I C *Collector Current (Pulse) - 7A P C Collector Dissipation (T C =25°C) 30W R θja Junction to Ambient 70°C/W R θjc Junction to Case 8.5°C/W T J Junction Temperature150°C T STG Storage Temperature- 65 ~ 150°C SymbolParameterTest ConditionMin.Typ.Max.Units V CEO (sus)* Collector-Emitter Sustaining Voltage : BD176 : BD178 : BD180 I C = - 100mA, I B = 0- 45 - 60 - 80 V V V I CBO Collector Cut-off Current

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BD180 (2) datasheet pdf Datasheet PDF - Unknown | All Datasheet PDF