BCX79 datasheet pdf

BCX79 Discrete POWER & Signal Technologies PNP General Purpose Amplifier BCX79 This device is designed for use as general purpose amplifiers and switches requiring collector currents to 300 mA. Sourced from Process 68. See PN200A for characteristics. Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage45V V CES Collector-Base Voltage45V V EBO Emitter-Base Voltage5.0V I C Collector Current - Continuous500mA T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits BCX79 P D Total Device Dissipation Derate above 25 ° C 625 5.0 mW mW / ° C R θ JC Thermal Resistance, Junction to Case83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient200 ° C/W E B C TO-92  1997 Fairchild Semiconductor Corporation

Specifications