BCW70LT1 (1) datasheet pdf

LESHAN RADIO COMPANY, LTD. M13–1/6 MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO – 45Vdc Emitter–Base VoltageV EBO – 5.0Vdc Collector Current — ContinuousI C – 100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR– 5 Board, (1) P D 225mW T A = 25°C Derate above 25°C 1.8mW/°C Thermal Resistance, Junction to Ambient R θJA 556°C/W Total Device Dissipation P D 300mW Alumina Substrate, (2) T A = 25°C Derate above 25°C 2.4mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg –55 to +150°C DEVICE MARKING BCW69LT1 = H1; BCW70LT1 = H2, ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted.) CharacteristicSymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –2.0 mAdc, I B = 0 )V (BR)CEO – 45—Vdc Collector–Emitter Breakdown Voltage (I C = –100 μAdc, V EB = 0 )V (BR)CES – 50—Vdc Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0)V (BR)EBO – 5.0—Vdc Collector Cutoff CurrentI CEO (V CE = –20 Vdc, I E = 0 )—– 100nAdc (V CE = –20 Vdc, I E = 0 , T A = 100°C)—– 10μAdc 1. FR– 5 = 1.0 x 0.75 x 0.062 in. 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 1 3 2 General Purpose Transistors PNP Silicon BCW69LT1 BCW70LT1 2 EMITTER 3 COLLECTOR 1 BASE CASE 318–08, STYLE 6 SOT–23 (TO–236AB)

Specifications