BCW68G (1) datasheet pdf

Features l Ideally Suited for Automatic Insertion l 150 o C Junction Temperature l Low Current, Low Frequency l Epitaxial Planar Die Construction Mechanical Data l Case: SOT-23, Molded Plastic l Terminals: Solderable per MIL-STD-202, Method 208 l Marking: DG l Weight: 0.008 grams ( approx.) Maximum Ratings @ 25 o C Unless Otherwise Specified Charateristic Symbol Value Unit Collector-Emitter Voltage V CEO -45 V Collector-Base Voltage V CBO -60 V Emitter-Base Voltage V EBO -5 V Collector Current(DC) I C -800 mA Peak Collector Current I CM -1000 mA Base Current(DC) I B -100 mA Peak Base Current I BM -200 mA Power Dissipation@T s =79 o C P d 330 mW Thermal Resistance, Junction to Ambient Air 285 (1) o C/W Thermal Resistance, Junction to Soldering Point 215 o C/W Operating & Storage Temperature T j , T STG -55~150 o C Notes: (1) Valid provided that leads are kept at ambient temperature. BCW68G PNP Small Signal Transistor 330mW R θJA R θJS Suggested Solder Pad Layout DIMENSIONS INCHESMM DIMMINMAXMINMAXNOTE A.110.1202.803.04 B.083.0982.102.64 C.047.0551.201.40 D.035.041.891.03 E.070.0811.782.05 F.018.024.45.60 G.0005.0039.013.100 H.035.044.891.12 J.003.007.085.180 K.015.020.37.51 .079 2.000 inches mm .031 .800 .035 .900 .037 .950 .037 .950 K A B C D E F G H J SOT-23 www.mccsemi.com
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Features

• -45 V
• -60 V
• -5 V
• -800 mA
• -1000 mA
• -100 mA
• -200 mA
• -55~150
• 2.000