BCW30LT1 (1) datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data General Purpose Transistors PNP Silicon MAXIMUM RATINGS RatingSymbolValueUnit Collector–Emitter VoltageV CEO –32Vdc Collector–Base VoltageV CBO –32Vdc Emitter–Base VoltageV EBO –5.0Vdc Collector Current – ContinuousI C –100mAdc THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Total Device Dissipation FR-5 Board (1) T A = 25°C Derate above 25°C P D 225 1.8 mW mW/°C Thermal Resistance, Junction to AmbientR θJA 556°C/W Total Device Dissipation Alumina Substrate, (2) T A = 25°C Derate above 25°C P D 300 2.4 mW mW/°C Thermal Resistance, Junction to AmbientR θJA 417°C/W Junction and Storage TemperatureT J , T stg – 55 to +150°C DEVICE MARKING BCW29LT1 = C1; BCW30LT1 = C2 ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinMaxUnit OFF CHARACTERISTICS Collector–Emitter Breakdown Voltage (I C = –2.0 mAdc, I E = 0) V (BR)CEO –32—Vdc Collector–Emitter Breakdown Voltage (I C = –100 μAdc, V EB = 0) V (BR)CES –32—Vdc Collector–Base Breakdown Voltage (I C = –10 μAdc, I C = 0) V (BR)CBO –32—Vdc Emitter–Base Breakdown Voltage (I E = –10 μAdc, I C = 0) V (BR)EBO –5.0—Vdc Collector Cutoff Current (V CB = –32 Vdc, I E = 0) (V CB = –32 Vdc, I E = 0, T A = 100°C) I CBO — — –100 –10 nAdc μAdc 1. FR– 5 = 1.0  0.75  0.062 in. 2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina. Thermal Clad is a trademark of the Bergquist Company Order this document by BCW29LT1/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BCW29LT1 BCW30LT1 1 2 3 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB)  Motorola, Inc. 1996 COLLECTOR 3 1 BASE 2 EMITTER

Specifications