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BCV61 1Jul-10-2001 NPN Silicon Double Transistor To be used as a current mirror Good thermal coupling and V BE matching High current gain Low collector-emitter saturation voltage VPS05178 2 1 3 4 EHA00012 C2 (1) Tr.2Tr.1 C1 (2) E1 (3)E2 (4) TypeMarkingPin ConfigurationPackage BCV61A BCV61B BCV61C 1Js 1Ks 1Ls 1 = C2 1 = C2 1 = C2 2 = C1 2 = C1 2 = C1 3 = E1 3 = E1 3 = E1 4 = E2 4 = E2 4 = E2 SOT143 SOT143 SOT143 Maximum Ratings Parameter ValueSymbolUnit V CEO 30VCollector-emitter voltage (transistor T1) V CBO 30Collector-base voltage (open emitter) (transistor T1) 6 V EBS Emitter-base voltage DC collector currentmA100 I C Peak collector current I CM 200 Base peak current (transistor T1) I BM 200 Total power dissipation, T S = 99 °C 300mW P tot Junction temperature°C150 T j -65 ... 150 T stg Storage temperature Thermal Resistance Junction - soldering point 1) R thJS 170K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
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