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2011-09-151 BC817UPN 5 4 6 3 2 1 NPN Silicon AF Transistor Array • For AF stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated NPN/PNP transistors in one package • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Tape loading orientation SC74_Tape 123 456 W1s Direction of Unreeling Top View Marking on SC74 package (for example W1s) corresponds to pin 1 of device Position in tape: pin 1 opposite of feed hole side EHA07177 654 321 C1B2E2 C2B1E1 TR1 TR2 TypeMarkingPin ConfigurationPackage BC817UPN1Bs 1=E12=B13=C24=E25=B26=C1SC74 Maximum Ratings Parameter SymbolValueUnit Collector-emitter voltageV CEO 45V Collector-base voltageV CBO 50 Emitter-base voltageV EBO 5 Collector currentI C 500mA Peak collector current, t p ≤ 10 msI CM 1000 Base currentI B 100 Peak base currentI BM 200 Total power dissipation- T S ≤ 115 °C P tot 330mW Junction temperatureT j 150°C Storage temperatureT stg -65 ... 150
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