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BC807U Nov-29-20011 PNP Silicon Transistor Array For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Two ( galvanic) internal isolated Transistors with good matching in one package VPW09197 1 2 3 4 5 6 EHA07175 654 321 C1B2E2 C2B1E1 TR1 TR2 TypeMarkingPin ConfigurationPackage BC807U5Bs1=E12=B13=C24=E25=B26=C1 SC74 Maximum Ratings Parameter ValueSymbolUnit Collector-emitter voltageV V CEO 45 Collector-base voltage V CBO 50 V EBO 5Emitter-base voltage DC collector current I C 500mA Peak collector currentA1 I CM I B 100Base currentmA Peak base current I BM 200 Total power dissipation, T S = 115 °C P tot 330mW Junction temperature T j °C150 Storage temperature T stg -65 ... 150 Thermal Resistance Junction - soldering point 1) R thJS 105K/W 1 For calculation of R thJA please refer to Application Note Thermal Resistance
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