BC807 (1) datasheet pdf

BC807 / BC808 — PNP Epitaxial Silicon Transistor © 2002 Fairchild Semiconductor Corporation www.fairchildsemi.com BC807 / BC808 Rev. 1.1.01 November 2014 BC807 / BC808 PNP Epitaxial Silicon Transistor Features • Switching and Amplifier Applications • Suitable for AF-Driver Stages and Low Power Output Stages • Complement to BC817 / BC818 Ordering Information Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be opera- ble above the recommended operating conditions and stressing the parts to these levels is not recommended. In addi- tion, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Values are at T A = 25°C unless otherwise noted. Part NumberMarkingPackagePacking Method BC80716MTF9FASOT-23 3LTape and Reel BC80725MTF9FBSOT-23 3LTape and Reel BC80740MTF9FCSOT-23 3LTape and Reel BC80840MTF9GCSOT-23 3LTape and Reel SymbolParameterValueUnit V CES Collector-Emitter Voltage BC807-50 V BC808-30 V CEO Collector-Emitter Voltage BC807-45 V BC808-25 V EBO Emitter-Base Voltage-5V I C Collector Current (DC)-800mA T J Junction Temperature150°C T STG Storage Temperature -65 to +150°C SOT-23 1. Base 2. Emitter 3. Collector 1 2 3

Features

• • Switching and Amplifier Applications
• • Suitable for AF-Driver Stages and Low Power Output Stages
• • Complement to BC817 / BC818
• 1. Base 2. Emitter 3. Collector