BC556B (1) datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Amplifier Transistors PNP Silicon MAXIMUM RATINGS RatingSymbol BC 556 BC 557 BC 558 Unit Collector – Emitter VoltageV CEO –65–45–30Vdc Collector – Base VoltageV CBO –80–50–30Vdc Emitter – Base VoltageV EBO –5.0Vdc Collector Current — ContinuousI C –100mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) CharacteristicSymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = –2.0 mAdc, I B = 0)BC556 BC557 BC558 V (BR)CEO –65 –45 –30 — — — — — — V Collector – Base Breakdown Voltage (I C = –100 μAdc)BC556 BC557 BC558 V (BR)CBO –80 –50 –30 — — — — — — V Emitter – Base Breakdown Voltage (I E = –100 mAdc, I C = 0)BC556 BC557 BC558 V (BR)EBO –5.0 –5.0 –5.0 — — — — — — V Collector–Emitter Leakage Current (V CES = –40 V)BC556 (V CES = –20 V)BC557 BC558 (V CES = –20 V, T A = 125°C)BC556 BC557 BC558 I CES — — — — — — –2.0 –2.0 –2.0 — — — –100 –100 –100 –4.0 –4.0 –4.0 nA μA Order this document by BC556/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC556,B BC557A,B,C BC558B CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER

Specifications