BC549C (1) datasheet pdf

1 Motorola Small–Signal Transistors, FETs and Diodes Device Data Low Noise Transistors NPN Silicon MAXIMUM RATINGS RatingSymbolBC549BC550Unit Collector – Emitter VoltageV CEO 3045Vdc Collector – Base VoltageV CBO 3050Vdc Emitter – Base VoltageV EBO 5.0Vdc Collector Current — ContinuousI C 100mAdc Total Device Dissipation @ T A = 25°C Derate above 25°C P D 625 5.0 mW mW/°C Total Device Dissipation @ T C = 25°C Derate above 25°C P D 1.5 12 Watt mW/°C Operating and Storage Junction Temperature Range T J , T stg – 55 to +150°C THERMAL CHARACTERISTICS CharacteristicSymbolMaxUnit Thermal Resistance, Junction to Ambient R qJA 200°C/W Thermal Resistance, Junction to Case R qJC 83.3°C/W ELECTRICAL CHARACTERISTICS (T A = 25°C unless otherwise noted) Characteristic SymbolMinTypMaxUnit OFF CHARACTERISTICS Collector – Emitter Breakdown Voltage (I C = 10 mAdc, I B = 0)BC549B,C BC550B,C V (BR)CEO 30 45 — — — — Vdc Collector – Base Breakdown Voltage (I C = 10 μAdc, I E = 0)BC549B,C BC550B,C V (BR)CBO 30 50 — — — — Vdc Emitter – Base Breakdown Voltage (I E = 10 mAdc, I C = 0) V (BR)EBO 5.0——Vdc Collector Cutoff Current (V CB = 30 V, I E = 0) (V CB = 30 V, I E = 0, T A = +125°C) I CBO — — — — 15 5.0 nAdc μAdc Emitter Cutoff Current (V EB = 4.0 Vdc, I C = 0) I EBO ——15nAdc Order this document by BC549B/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA BC549B,C BC550B,C CASE 29–04, STYLE 17 TO–92 (TO–226AA) 1 2 3  Motorola, Inc. 1996 COLLECTOR 1 2 BASE 3 EMITTER

Specifications