BC516 (1) datasheet pdf

Semiconductor Group1 PNP Silicon Darlington Transistor BC 516 5.91 Maximum Ratings TypeOrdering CodeMarking Package 1) Pin Configuration BC 516Q62702-C944–TO-92 123 CBE ParameterSymbolValuesUnit Collector-emitter voltageV CE030V Peak collector currentICM800 Base currentI B100 Collector currentI C500mA Junction temperatureTj150 ̊C Total power dissipation,T C = 66 ̊CPtot625mW Storage temperature rangeT stg– 65 ... + 150 Collector-base voltageVCB040 Thermal Resistance Junction - ambientRth JA≤ 200K/W Emitter-base voltageV EB010 Peak base currentIBM200 Junction - case 2) Rth JC≤ 135 1) For detailed information see chapter Package Outlines. 2) Mounted on Al heat sink 15 mm× 25 mm× 0.5 mm. lHigh current gain lHigh collector current lComplementary type: BC 517 (NPN) 1 2 3

Specifications