BC369 datasheet pdf

www.DataSheet4U.com BC369 PNP General Purpose Amplifier Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics TA = 25°C unless otherwise noted SymbolParameterValueUnits V CEO Collector-Emitter Voltage20V V CES Collector-Base Voltage25V V EBO Emitter-Base Voltage5.0V I C Collector Current - Continuous1.5A T J , T stg Operating and Storage Junction Temperature Range-55 to +150 ° C SymbolCharacteristicMaxUnits BC369 P D Total Device Dissipation Derate above 25 ° C 625 5.0 mW mW / ° C R θ JC Thermal Resistance, Junction to Case83.3 ° C/W R θ JA Thermal Resistance, Junction to Ambient200 ° C/W This device is designed for general purpose medium power amplifiers and switches requiring collector currents to 1.2 A. Sourced from Process 77. B C E TO-92 1997 Fairchild Semiconductor Corporation NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. 3) All voltages (V) and currents (A) are negative polarity for PNP transistors. BC369

Specifications