BC338 datasheet pdf

ambient temperature unless otherwise specified .098 (2.5) max .

∅ .022 (0.55) 4/98 BC337, BC338 SymbolValueUnit Collector-Emitter VoltageBC337 BC338 V CES V CES 50 30 V V Collector-Emitter VoltageBC337 BC338 V CEO V CEO 45 25 V V Emitter-Base VoltageV EBO 5V Collector CurrentI C 800mA Peak Collector CurrentI CM 1A Base CurrentI B 100mA Power Dissipation at T amb = 25 °CP tot 625 1) mW Junction TemperatureT j 150°C Storage Temperature RangeT S –65 to +150°C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case NPN Silicon Epitaxial Planar Transistors for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. These types are also available subdi- vided into three groups -16, -25, and -40, according to their DC current gain. As com- plementary types, the PNP transistors BC327 and BC328 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18. ♦ ♦ ♦

Specifications