BC328 (1) datasheet pdf

ambient temperature unless otherwise specified .098 (2.5) max .

∅ .022 (0.55) 4/98 SymbolValueUnit Collector-Emitter VoltageBC327 BC328 –V CES –V CES 50 30 V V Collector-Emitter VoltageBC327 BC328 –V CEO –V CEO 45 25 V V Emitter-Base Voltage–V EBO 5V Collector Current–I C 800mA Peak Collector Current–I CM 1A Base Current–I B 100mA Power Dissipation at T amb = 25 °CP tot 625 1) mW Junction TemperatureT j 150°C Storage Temperature RangeT S –65 to +150°C 1) Valid provided that leads are kept at ambient temperature at a distance of 2 mm from case. PNP Silicon Epitaxial Planar Transistors for switching and amplifier applications. Espe- cially suit-able for AF-driver stages and low-power output stages. These types are also available subdivided into three groups -16, -25, and -40, according to their DC current gain. As complementary types, the NPN transistors BC337 and BC338 are recommended. On special request, these transistors are also manufactured in the pin configuration TO-18. ♦ ♦ BC327, BC328 ♦

Specifications