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iscwebsite：www.iscsemi.comisc&iscsemiisregisteredtrademark 1 iscSiliconPNPPowerTransistor2SA473 DESCRIPTION ·Collector-EmitterBreakdownVoltage :V (BR)CEO =-30V(Min) ·GoodLinearityofh FE ·ComplementtoType2SC1173 ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation APPLICATIONS ·Poweramplifierapplications. ·Carradioandcarstereooutputstageapplications. ABSOLUTEMAXIMUMRATINGS(T a =25 °C) SYMBOLPARAMETERVALUEUNIT V CBO Collector-BaseVoltage-30V V CEO Collector-EmitterVoltage-30V V EBO Emitter-BaseVoltage-5V I C CollectorCurrent-Continuous-3A I E EmitterCurrent-Continuous-3.0A P C TotalPowerDissipation @T C =25°C 10W T J JunctionTemperature150 °C T stg StorageTemperatureRange-55~150 °C
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